QN3107M6N Datasheet, Mosfet, UBIQ

✔ QN3107M6N Features

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 2.6mΩ ID (TC=25℃) 110A Applicatio

✔ QN3107M6N Application

. The QN3107M6N meet the RoHS and Green Product requirement with full function reliability approved. Feature

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QN3107M6N

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UBIQ

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📄 Datasheet

Description:

N-channel 30v fast switching mosfet. The QN3107M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and g

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QN3107M6N N-Channel 30V Fast Switching MOSFET UBIQ