QN3107M6N - N-Channel 30V Fast Switching MOSFET

Product Overview

uPI Semiconductor

Datasheet Details

Part number	QN3107M6N
Manufacturer	uPI Semiconductor
File Size	1.00 MB
Description	N-Channel 30V Fast Switching MOSFET
Datasheet	QN3107M6N Datasheet
Additional preview pages of the QN3107M6N datasheet.

QN3107M6N Product details

Description

The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

It is ideally suited to support synchronous buck converter applications.

Features

Advanced high cell density Trench technology.
Super Low Gate Charge.
Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 2.6mΩ ID (TC=25 °C) 118A.

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Published: Sep 2, 2024 |