QN3107M6N
Overview
The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications.
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V)
- 6mΩ ID (TC=25 °C) 118A
