QN3107M6N - N-Channel 30V Fast Switching MOSFET

uPI Semiconductor

General Description

The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

It is ideally suited to support synchronous buck converter applications.

Key Features

Advanced high cell density Trench technology.
Super Low Gate Charge.
Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 2.6mΩ ID (TC=25 °C) 118A.

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QN3107M6N n-channel 30v fast switching mosfet by uPI Semiconductor - Datasheet Preview

Datasheet Details

Part number	QN3107M6N
Manufacturer	uPI Semiconductor
File Size	1.00 MB
Description	N-Channel 30V Fast Switching MOSFET
Datasheet	QN3107M6N Datasheet

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QN3107M6N N-Channel 30V Fast Switching MOSFET General Description The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronous buck converter applications. The QN3107M6N meets RoHS and Green Product requirements while supporting full function reliability. Features  Advanced high cell density Trench technology  Super Low Gate Charge  Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 2.