| Part Number | QN3107M6N Datasheet |
|---|---|
| Manufacturer | UBIQ Semiconductor |
| Overview | The QN3107M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 2.6mΩ ID (TC=25℃) 110A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch PRPAK 5X6. |
QN3107M6N Datasheet and Specifications PDF
The QN3107M6N is a N-Channel 30V Fast Switching MOSFET.
| Part Number | QN3107M6N Datasheet |
|---|---|
| Description | N-Channel 30V Fast Switching MOSFET |
| Manufacturer | uPI Semiconductor |
| Overview |
The QN3107M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics. It is ideally suited to support synchronou.
* Advanced high cell density Trench technology * Super Low Gate Charge * Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 2.6mΩ ID (TC=25 °C) 118A Applications * High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA * Networking DC-DC Power System * Load. |