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QN3109 - N-Channel 30V Fast Switching MOSFET

Download the QN3109 datasheet PDF (QN3109M6N included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel 30v fast switching mosfet.

Description

The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (QN3109M6N-UBIQ.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number QN3109
Manufacturer UBIQ
File Size 258.82 KB
Description N-Channel 30V Fast Switching MOSFET
Datasheet download datasheet QN3109 Datasheet

📁 Similar Datasheet

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Other Datasheets by UBIQ
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Full PDF Text Transcription

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QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.
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