Datasheet4U Logo Datasheet4U.com

QN3109 - N-Channel 30V Fast Switching MOSFET

This page provides the datasheet information for the QN3109, a member of the QN3109M6N N-Channel 30V Fast Switching MOSFET family.

Description

The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved.

Features

  • Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A.

📥 Download Datasheet

Datasheet preview – QN3109

Datasheet Details

Part number QN3109
Manufacturer UBIQ
File Size 258.82 KB
Description N-Channel 30V Fast Switching MOSFET
Datasheet download datasheet QN3109 Datasheet
Additional preview pages of the QN3109 datasheet.

📁 Similar Datasheet

  • QN3102M6N - N-Channel 30V Fast Switching MOSFET (uPI Semiconductor)
  • QN3107M6N - N-Channel 30V Fast Switching MOSFET (uPI Semiconductor)
Other Datasheets by UBIQ
  • QN3109M6N - N-Channel 30V Fast Switching MOSFET
  • QN3103M6N - N-Channel 30V Fast Switching MOSFET
  • QN3107M6N - N-Channel 30V Fast Switching MOSFET

Full PDF Text Transcription

Click to expand full text
QN3109M6N N N-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.
Published: |