P0120HLB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
200
1 2.2
3
V
±100 nA
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
IDSS
RDS(ON)
gfs
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 0.5A
VGS = 10V, ID = 0.5A
VDS = 10V, ID = 0.5A
1
mA
10
1.5 1.9
1.2 1.4
Ω
1.2 S
DYNAMIC
Input Capacitance
Ciss
94
Output Capacitance
Coss VGS = 0V, VDS = 25V, f = 1MHz
30 pF
Reverse Transfer Capacitance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Crss
Qg(VGS=10V)
Qg(VGS=4.5V
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 160V,
VGS = 10V, ID = 0.8A
VDS = 100V, ID @ 0.8A
VGS = 10V, RGS = 6Ω
8
3.7
1.7
nC
1.2
1.4
5
16
nS
8
18
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 0.8A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 0.8A, dl/dt = 100A / mS
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
0.8
1
68
118
A
V
nS
nC
REV 1.0
2 2016/6/15
