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P0165ED
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
650V
10.6Ω @VGS = 10V
ID 1A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1，2 Avalanche Current3
TC = 25 °C TC = 100 °C
ID
IDM IAS
1 0.7 3 0.5
Avalanche Energy3
EAS 1.25
Power Dissipation
TC = 25 °C TC = 100 °C
PD
37 15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed.
P0165ED Datasheet
