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P1004BS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 11mΩ @VGS = 10V
ID 53A
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
53 34 159
Avalanche Current
IAS 40
Avalanche Energy
L = 0.1mH
EAS
82
Power Dissipation
TC = 25 °C TC = 100 °C
PD
63 25
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case 1Pulse width limited by maximum junction temperature. 2The maximum current rating in limited by bond-wires.
SYMBOL RqJC
TYPICAL
MAXIMUM UNITS 2 °C / W
REV1.
P1004B Datasheet
