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P1004HV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
40V 13mΩ @VGS = 10V
ID 10A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS ±24
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
10 8 40
Avalanche Current Avalanche Energy2
L = 0.1mH
IAS EAS
38 71
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2 1.28
Operating Junction & Storage Temperature Range Lead Temperature( 1/16" from case for 10 sec)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient
Junction-to-Lead 1Pulse width limited by maximum junction temperature. 2VDD = 20V, Starting TJ = 25°C.
P1004HV Datasheet
