900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UNIKC

P1203BKA Datasheet Preview

P1203BKA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P1203BKA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 11.8mΩ @VGS = 10V
ID
39A
PDFN 5*6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
39
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
24
11
Pulsed Drain Current1
TA = 70 °C
IDM
8
110
Avalanche Current
IAS 24
Avalanche Energy
L = 0.1mH
EAS
30
TC = 25 °C
31
Power Dissipation
TC = 100 °C
TA = 25 °C
PD
12
2.5
TA = 70 °C
1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
Ver 1.0
1 2012/10/10




UNIKC

P1203BKA Datasheet Preview

P1203BKA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P1203BKA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case
Junction-to-Ambient2
RqJC
RqJA
4
°C / W
50
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA = 25°C. The value in any given application depends on the user's specific board design.
3Package limitation current is 35A.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V , TJ = 55 °C
VGS = 4.5V, ID = 11A
VGS = 10V, ID = 11A
VDS = 5V, ID = 11A
30
1.0
1.5 3.0
±100
1
10
13 16.5
8.6 11.8
25
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg(VGS =10V)
Qg(VGS =4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 11A
VDS = 15V,
ID @ 11A, VGS = 10V, RGEN = 6Ω
1020
118
105
1.6
21
11
4
5
18
10
36
10
UNIT
V
nA
mA
S
pF
Ω
nC
nS
Ver 1.0
2 2012/10/10


Part Number P1203BKA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 6 Pages
PDF Download

P1203BKA Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 P1203BKA N-Channel Enhancement Mode MOSFET
UNIKC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy