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P1210BK Datasheet Preview

P1210BK Datasheet

N-Channel Enhancement Mode MOSFET

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P1210BK
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
12mΩ @VGS = 10V
ID
40A
PDFN 5X6P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
40
26
110
Continuous Drain Current
TA = 25 °C
TA= 70 °C
ID
12
9.4
Avalanche Current
IAS 20
Avalanche Energy
L = 1mH EAS 200
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
40
20
Power Dissipation3
TA = 25 °C
TA = 70 °C
PD
4.1
2.6
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
Junction-to-Ambient2
t 10s
Steady-State
RqJA
RqJA
30
55
Junction-to-Case
Steady-State
RqJC
2.5
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.0
1 2015/10/14




UNIKC

P1210BK Datasheet Preview

P1210BK Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P1210BK
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 250mA
100
V
VDS = VGS, ID = 250mA
1.3 1.8 2.3
VDS = 0V, VGS = ±20V
±100 nA
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 55 °C
1
mA
10
VGS = 10V, ID = 12A
VGS = 4.5V , ID = 12A
9 12
9.7 15
VDS = 5V, ID = 12A
84 S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
6410
338
283
0.73
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Qg
VGS =10V
VGS =4.5V
Qgs
VDS = 50V, VGS = 10V,
ID = 12A
153
76
nC
22
Gate-Drain Charge2
Qgd
41
Turn-On Delay Time2
td(on)
65
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 50V,
ID @ 12A, VGS = 10V, RGEN = 6Ω
220
30
nS
Fall Time2
tf
40
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
33 A
Forward Voltage1
VSD IF = 12A, VGS = 0V
1.3 V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 12A, dlF/dt = 100A / mS
32 nS
40 nC
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
REV 1.0
2 2015/10/14


Part Number P1210BK
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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