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P3055LDG Datasheet Preview

P3055LDG Datasheet

N-Channel Enhancement Mode MOSFET

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P3055LDG
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 90mΩ @VGS = 10V
ID
12A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC= 25 °C
TC= 100 °C
ID
IDM
12
8
45
Avalanche Energy
L=0.1mH
EAS
60
Power Dissipation
TC= 25 °C
TC= 100°C
PD
48
20
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
Case-to-Heatsink
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
RqCS
TYPICAL
1
MAXIMUM
3
75
UNITS
°C / W
REV 1.0
1 2014/5/19




UNIKC

P3055LDG Datasheet Preview

P3055LDG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

P3055LDG
N-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS =20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS = 10V, VGS = 10V
25
0.8
12
1.2 2.5
V
±250 nA
25
mA
250
A
Drain-Source On-State
Resistance1
RDS(ON)
VGS =5V, ID =12A
VGS =10V, ID =12A
70 120
50 90
Forward Transconductance1
gfs
VDS =15V, ID =12A
16 S
DYNAMIC
Input Capacitance
Output Capacitance
Ciss
Coss
VGS = 0V, VDS = 15V, f = 1MHz
450
200
pF
Reverse Transfer Capacitance
Crss
60
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Qg
Qgs
Qgd
VDS = 0.5V(BR)DSS, VGS = 10V,
ID = 6A
15
2.0
7.0
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
td(on)
tr
td(off)
VDS = 15V ,RL = 1Ω
ID12A, VGS = 10V,RGS =2.5Ω
6.0
6.0
20
Fall Time2
tf
5.0
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = IS, VGS = 0V
Reverse Recovery Time
trr
30
Reverse Recovery Charge
Qrr
0.043
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
12
1.5
nC
nS
A
V
nS
mC
REV 1.0
2 2014/5/19


Part Number P3055LDG
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 4 Pages
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