| Part Number | P3055LDG Datasheet |
|---|---|
| Manufacturer | UNIKC |
| Overview | P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMET. TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250mA 25 VDS = VGS, ID = 250mA 0.8 VDS = 0V, VGS = ±20V VDS =20V, VGS = 0V VDS =20V, VGS = 0V, TJ. |
P3055LDG Datasheet and Specifications PDF
The P3055LDG is a N-Channel MOSFET.
| Part Number | P3055LDG Datasheet |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Manufacturer | Niko |
| Overview | NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50m ID 12A 1. GATE 2. DRAIN 3. SO. erwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °. |