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P3055LDG
N-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
25V
90mΩ @VGS = 10V
12A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID
12 8
IDM
45
Avalanche Energy
L=0.1mH
EAS
60
Power Dissipation
TC= 25 °C TC= 100°C
PD
48 20
Operating Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg TL
-55 to 150 275
UNITS V A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
P3055LDG Datasheet
