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P3055LLG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25V 72mΩ @VGS = 10V
ID 6A
SOT- 223
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
6 3.3
Pulsed Drain Current2
IDM 21
Avalanche Current
IAS 12
Avalanche Energy
L = 0.1mH
EAS
7.5
Power Dissipation
TA = 25 °C TA = 70 °C
PD
3 1.1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Limited by package.
SYMBOL
RqJc RqJA
TYPICAL
MAXIMUM
12 42
UNITS °C / W
Ver 1.
P3055LLG Datasheet
