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P3506DT - P-Channel MOSFET

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Part number P3506DT
Manufacturer UNIKC
File Size 501.36 KB
Description P-Channel MOSFET
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P3506DT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -60V 35mΩ @VGS = 10V ID -40A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -40 -25 -150 Avalanche Current Avalanche Energy2 IAS -40 L = 0.1mH EAS 80 Power Dissipation TC = 25 °C PD 104 TC = 100 °C 41 Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2VDD=-30V .Starting TJ = 25°C SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.
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