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P5503QV
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V
RDS(ON) 22mΩ @VGS =10V
-30V
60mΩ @VGS = -10V
ID 7.5A -4.5A
Channel N P
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
CH. LIMITS
Drain-Source Voltage
N 30 VDS P -30
Gate-Source Voltage
N ±20 VGS P ±20
Continuous Drain Current
TA = 25 °C TA = 70°C
N 7.5 P -4.5 ID N 6 P -3.6
Pulsed Drain Current1
N 30 IDM P -20
Avalanche Current
N 22 IAS P -21
Avalanche Energy
L = 0.1mH
N 24 EAS P 22
Power Dissipation
TA = 25 °C TA = 70 °C
N 2
P PD
N 1.28
P
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
P5503QV Datasheet
