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PA102FDG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-20V
115mΩ @VGS = -4.5V
ID -10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -20
Gate-Source Voltage
VGS ±12
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
-10 -6.2 -24
Power Dissipation
TC = 25 °C TC = 100 °C
PD
25 9.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤1%
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 5
110
UNITS °C / W
Ver 1.
PA102FDG Datasheet
