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PB210BD Datasheet Preview

PB210BD Datasheet

N-Channel Enhancement Mode MOSFET

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PB210BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID
10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
10
6
40
Avalanche Current
IAS 18
Avalanche Engergy
L = 0.1 mH
EAS
16.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
41
17
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3
62.5
UNITS
°C / W
Rev 1.2
1 2014/5/23




UNIKC

PB210BD Datasheet Preview

PB210BD Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PB210BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
100
1.0 1.5 2.0
±100
Zero Gate Voltage Drain Current
On-State Drain Current1
IDSS
ID(ON)
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V , TJ = 125 °C
VDS = 10V, VGS = 10V
40
1
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 5V, ID = 6A
VGS = 10V, ID = 6A
VDS = 10V, ID = 6A
203 240
191 230
10
DYNAMIC
Input Capacitance
Ciss
802 1002
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
80 100
Reverse Transfer Capacitance
Crss
41 51
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 0V, f = 1MHZ
VDS = 50V, VGS = 10V,
ID = 6A
VDD = 50V,
ID@ 6A, VGS = 10V, RGEN = 6Ω
2.5 3.1
15
2
4
16
330
39
111
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 6A, VGS = 0V
10
1.4
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 6A, dl/dt = 500A / ms
Qrr
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
75
0.17
2Independent of operating temperature.
UNIT
V
nA
mA
A
S
pF
Ω
nC
nS
A
V
nS
nC
Rev 1.2
2 2014/5/23


Part Number PB210BD
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 5 Pages
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