PB210BD Description
PB210BD-VB PB210BD-VB Datasheet N-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 D TO-252.
PB210BD Key Features
- TrenchFET® Power MOSFET
- 150 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC