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PB210BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID 2.1A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TA = 25 °C TA = 70 °C
ID IDM
2.1 1.7 17
Avalanche Current
IAS 17
Avalanche Energy
L =0.1mH
EAS
15.4
Power Dissipation
TA= 25 °C TA =70 °C
PD
2.3 1.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Limited by Package.
SYMBOL RqJA RqJc
TYPICAL
MAXIMUM 50 25
UNITS °C / W
REV 1.
PB210BV Datasheet
