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PB210BC
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
240mΩ @VGS = 10V
ID 2.2A
SOT-89
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
ID IDM
2.2 1.8 8
Avalanche Current
IAS 6
Avalanche Energy
L = 1mH
EAS
18
Power Dissipation
TA = 25 °C TA = 100 °C
PD
2.5 1.6
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
50
Junction-to-Case
RqJC
10
1Pulse width limited by maximum junction temperature.
PB210BC Datasheet
