PB210BD
PB210BD is N-Channel MOSFET manufactured by UNIKC.
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
10A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Engergy
L = 0.1 m H
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A m J W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
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