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PB560DZ
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 26mΩ @VGS = 4.5V
ID 7.8A
PDFN 2X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current Pulsed Drain Current1
TA= 25 °C TA = 70 °C
ID IDM
7.8 6.2 40
Avalanche Current
IAS 10
Avalanche Energy3
EAS 4.9
Power Dissipation
TA = 25 °C TA= 70 °C
PD
2.4 1.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
1Pulse width limited by maximum junction temperature.
PB560DZ Datasheet
