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PD533BA
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
-40V
14mΩ @VGS = -10V
ID -51A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS -40
Gate-Source Voltage
VGS ±25
Continuous Drain Current2 Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID IDM
-51 -40 -150
Avalanche Current
IAS -38
Avalanche Energy
L = 0.1mH
EAS
72.2
Power Dissipation
TC= 25 °C TC= 100°C
PD
65 42
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is -40A.
SYMBOL RqJC RqJA
TYPICA L
MAXIMUM 1.9 62.
PD533BA Datasheet
