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PD506BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 70A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
70 44 160
Avalanche Current
IAS 34
Avalanche Energy
L = 0.1mH
EAS
57
Power Dissipation
TC = 25 °C TC = 100 °C
PD
50 20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 60A
SYMBOL
RqJC RqJA
TYPICAL
MAXIMUM
2.5 62.
PD506BA Datasheet
