UNIKC PD506BA
N-Channel MOSFET
| Part No. | PD506BA |
|---|---|
| Datasheet | PD506BA Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 70 44 160 Avalanche Current IAS 34 Avalanche Energy L = 0.1mH EAS 57 Power Dissipation TC = 25 °C TC = 100 °C PD 50 20 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 60A SYMBOL RqJC RqJA TYPICAL MAXIMUM 2.5 62.5 UNITS °C / W Ver 1.0 1 2014/3/31 PD506BA N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX
