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PE601CA Datasheet Preview

PE601CA Datasheet

P&N-Channel Enhancement Mode MOSFET

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PE601CA
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
30V
-30V
RDS(ON)
22mΩ @VGS = 10V
28mΩ @VGS = -10V
ID
20A
-19A
Channel
N
P
100% UIS Tested
PDFN 3X3P 100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL CH. LIMITS
Drain-Source Voltage
N 30
VDS P -30
Gate-Source Voltage
N ±20
VGS
P ±20
TC = 25 °C
N 20
P -19
Continuous Drain Current4
TC = 100 °C
TA = 25 °C
N 13
P -12
ID N 8.1
P -7.4
TA= 70 °C
N 6.5
P -5.9
Pulsed Drain Current1
N 40
IDM P -35
Avalanche Current
N 11.9
IAS P -19.3
Avalanche Energy
L =0.1mH
N 7.1
EAS
P 18.7
Power Dissipation
TC = 25 °C
TC = 100 °C
N 17
P 18
PD N 7.1
P 7.3
UNITS
V
V
A
mJ
W
REV 1.1
1 2015/11/12




UNIKC

PE601CA Datasheet Preview

PE601CA Datasheet

P&N-Channel Enhancement Mode MOSFET

No Preview Available !

PE601CA
N&P-Channel Enhancement Mode MOSFET
Power Dissipation3
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
N 2.7
P 2.7
PD N 1.7
P 1.7
TJ, Tstg
-55 to 150
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient2
t10s
Junction-to-Ambient2
Steady-State
SYMBOL
RqJA
CH. TYPICA
NL
P
N
P
MAXIMUM
45
45
71
69
Junction-to-Case
Steady-State
RqJC
N
P
7
6.8
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is N-Ch=8.3A, P-Ch=-6.9A.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
CH.
MIN TYP
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
V(BR)DSS
VGS = 0V, ID = 250mA
VGS = 0V, ID = -250mA
N 30
P -30
VGS(th)
VDS = VGS, ID = 250mA
VDS = VGS, ID = -250mA
N1
1.6
P -1 -1.5
IGSS
VDS = 0V, VGS = ±20V
VDS = 0V, VGS = ±20V
N
P
VDS = 24V, VGS = 0V
N
IDSS
VDS = -24V, VGS = 0V
P
VDS = 20V, VGS = 0V, TJ = 55 °C N
VDS = -20V, VGS = 0V, TJ = 55 °C P
MAX
2.5
-2.5
±100
±100
1
-1
10
-10
UNITS
V
nA
mA
REV 1.1
2 2015/11/12


Part Number PE601CA
Description P&N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 12 Pages
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