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PE6B0SA Datasheet Preview

PE6B0SA Datasheet

N-Channel Enhancement Mode MOSFET

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PE6B0SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 5mΩ @VGS = 10V
ID
42A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
42
Continuous Drain Current3
TC = 100 °C
TA = 25 °C
ID
26
16
Pulsed Drain Current1
TA= 70 °C
IDM
13
80
Avalanche Current
IAS 25
Avalanche Energy
L =0.1mH
EAS
31
TC = 25 °C
17.8
Power Dissipation4
TC = 100 °C
TA = 25 °C
PD
7
2.7
TA = 70 °C
1.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
t10s
Steady-State
RqJA
RqJA
45
65
Junction-to-Case
Steady-State
RqJC
7
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3Package limitation current is 27A
4The Power dissipation is based on RqJA t 10s value.
UNITS
°C / W
REV 1.1
1 2016/6/13




UNIKC

PE6B0SA Datasheet Preview

PE6B0SA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE6B0SA
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS = 0V, ID = 1mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
VGS = 4.5V, ID = 15A
VGS = 10V , ID = 15A
VDS = 5V, ID = 15A
30
1.35 1.85 2.3
±100
0.5
5
5.7 8.5
3.9 5
50
V
nA
mA
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
VGS = 0V, VDS = 15V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
1200
235
152
2.4
pF
Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V , ID = 15A
VDD= 15V,
ID @ 15A, VGEN = 10V, RG= 6Ω
25
13 nC
3.3
8
19
10
nS
40
12
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
Forward Voltage1
VSD IF = 15A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 15A, dlF/dt = 100A / mS
11
1.5
1Pulse test : Pulse Width 300 msec, Duty Cycle 2.
2Independent of operating temperature.
17.8
1
A
V
nS
nC
REV 1.1
2 2016/6/13


Part Number PE6B0SA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 8 Pages
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