PE606DT Description
PE606DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V RDS(ON) 11mΩ @VGS = 10V Q1 30V 16mΩ @VGS = 10V ID 30A 23A PDFN 3X3S RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Drain-Source Voltage VDS 30.