Part PE6003
Description N-Channel Enhancement Mode Power MOSFET
Category MOSFET
Manufacturer semi one
Size 726.87 KB
semi one

PE6003 Overview

Description

The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package D G S Marking and pin Assignment