Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL Features
- VDS =60V,ID =4A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery Switch
- DC/DC Converter
S Schematic diagram
SOT-223 -3L top...