Datasheet Summary
N-Channel Enhancement Mode Power MOSFET
Description
The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V
（Typ：38mΩ）
Application
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram
SOT-223-3L...