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PE606BA - N-Channel Enhancement Mode Field Effect Transistor

Download the PE606BA datasheet PDF. This datasheet also covers the PE606BA-NIKO variant, as both devices belong to the same n-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (PE606BA-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE606BA
Manufacturer NIKO-SEM
File Size 235.60 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet PE606BA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode PE606BA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 18mΩ ID3 23A D G S D D DD #1 S S S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 TC = 25 °C TC = 100 °C Continuous Drain Current3 Pulsed Drain Current1 TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Power Dissipation4 TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range VDS VGS ID IDM IAS EAS PD Tj, Tstg 30 V ±20 V 23 15 10.6 A 8.5 60 12.6 7.9 mJ 17 7 W 3.5 2.