PE60P80G Datasheet | ChipSourceTek

PE60P80G P-Channel Enhancement Mode Power MOSFET PE60P80G Description The PE60P80G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE60P80G General Features - VDS = -60V, ID = -80A Schematic diagram RDS(ON) < 15mΩ @ VGS=-10V RDS(ON) < 18mΩ @ VGS=-4.5V - High Power and current handing capability - Lead free product is acquired 技 k - Surface Mount Package e PE60P80G Application - PWM applications - Load switch 科 T - Power management Marking and pin assignment 源特 urce DFN5x6-8L o PE60P80G...