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PE6H6BA Datasheet Preview

PE6H6BA Datasheet

N-Channel Enhancement Mode MOSFET

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PE6H6BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 7.8mΩ @VGS = 10V
ID
36A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current4
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
36
23
100
Continuous Drain Current
TA = 25 °C
TA = 70 °C
ID
14
11
Avalanche Current
IAS 22
Avalanche Energy
L =0.1mH
EAS
24
Power Dissipation
Power Dissipation3
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
PD
20
8.3
3.1
2
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
REV 1.0
1 2016/12/19




UNIKC

PE6H6BA Datasheet Preview

PE6H6BA Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

PE6H6BA
N-Channel Enhancement Mode MOSFET
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
t 10s
RqJA
40
Junction-to-Ambient2
Steady-State
RqJA
68
Junction-to-Case
Steady-State
RqJC
6
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C.
3The Power dissipation is based on RqJA t 10s value.
4Package limitation current is 13A.
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0V, ID = 250mA
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
30
1.3 1.75 2.3
V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
1
mA
10
Drain-Source On-State
Resistance1
Forward Transconductance1
RDS(ON)
gfs
VGS = 4.5V, ID = 13A
VGS = 10V , ID = 13A
VDS = 5V, ID = 13A
7.3 11
5.5 7.8
47 S
DYNAMIC
Input Capacitance
Ciss
864
Output Capacitance
Coss VGS = 0V, VDS = 15V, f = 1MHz 146 pF
Reverse Transfer Capacitance
Crss
106
Gate Resistance
Rg VGS = 0V, VDS = 0V, f = 1MHz 1 Ω
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Qg(VGS=10V)
Qg(VGS=4.5V)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 15V,VGS = 10V,
ID = 13A
VDS= 15V, ID @ 13A,
VGS = 10V, RGEN= 6Ω
18
10 nC
1.8
5.2
17
25
nS
30
18
REV 1.0
2 2016/12/19


Part Number PE6H6BA
Description N-Channel Enhancement Mode MOSFET
Maker UNIKC
Total Page 9 Pages
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