PV551BA P-Channel MOSFET
PV551BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 20mΩ @VGS = -10V ID -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -9 -7 -40 Avalanche Current IAS -23.5 Avalanche Energy L=0.1mH EAS 27 Power Dissipation3 TA = 25 °C TA = 70 °C PD 3 2 Junct.
