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PV501BA - P-Channel MOSFET

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Part number PV501BA
Manufacturer UNIKC
File Size 755.56 KB
Description P-Channel MOSFET
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PV501BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 7.5mΩ @VGS = -10V ID -12A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -12 -9.6 -50 Avalanche Current IAS -34 Avalanche Energy L=0.1mH EAS 57.8 Power Dissipation TA = 25 °C TA = 70 °C PD 1.8 1.1 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 68 1Pulse width limited by maximum junction temperature.
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