PV507BA Overview
2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.
P-channel Logic Level Enhancement Mode Field Effect Transistor
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | PV507BA |
|---|---|
| Manufacturer | NIKO-SEM |
| File Size | 212.26 KB |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet | PV507BA PV507BA-NIKO Datasheet (PDF) |
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2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3The Power dissipation is based on RJA t ≦10s value.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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PV507BA | P-Channel MOSFET | UNIKC |
| Part Number | Description |
|---|---|
| PV510BA | N-Channel Enhancement Mode Field Effect Transistor |
| PV563BA | P-Channel Enhancement Mode Field Effect Transistor |
| PV5G3EA | P-Channel Field Effect Transistor |