TD357EG - N-Channel MOSFET

UNIKC

Datasheet Details

Part number	TD357EG
Manufacturer	UNIKC
File Size	362.04 KB
Description	N-Channel MOSFET
Datasheet	TD357EG Datasheet
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TD357EG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 6mΩ @VGS = 10V ID 74A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 74 44 130 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 61.2 Power Dissipation TC = 25 °C TC = 100 °C PD 56 22 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 60A SYMBOL RqJC TYPICAL MAXIMUM UNITS 2.2 °C / W REV 1.

Published: Feb 7, 2017 |