900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






UTC

11N80-C Datasheet Preview

11N80-C Datasheet

N-CHANNEL MOSFET

No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
11N80-C
11A, 800V NHANNEL
POWER MOSFET
DESCRIPTION
The UTC 11N80-C provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES0
* RDS(ON) 0.9 Ω @ VGS=10V, ID=5.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1
1
1
Power MOSFET
TO-3P
TO-220F1
TO-220F2
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N80L-TF1-T
11N80G-TF1-T
11N80L-TF2-T
11N80G-TF2-T
11N80L-T3P-T
11N80G-T3P-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1
TO-220F2
TO-3P
Pin Assignment
123
GDS
GDS
GDS
Packing
Tube
Tube
Tube
11N80G-TF1-T
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube
(2) TF1: TO-220F1, TF2: TO-220F2, T3P: TO-3P
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC
11N80
1
L: Lead Free
G: Halogen Free
Date Code
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 8
QW-R205-450.C




UTC

11N80-C Datasheet Preview

11N80-C Datasheet

N-CHANNEL MOSFET

No Preview Available !

11N80-C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
800
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
11 A
Pulsed (Note 2)
IDM
22
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
451 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
1.2 V/ns
Power Dissipation
TO-220F1/ TO-220F2
TO-3P
PD
40 W
297 W
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55 ~ +150
°С
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=10mH, IAS=9.5A, VDD=90V, RG=25 Ω, Starting TJ = 25°C
4. ISD11A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220F1/ TO-220F2
TO-3P
TO-220F1/TO-220F2
TO-3P
SYMBOL
θJA
θJC
RATINGS
62.5
40
3.125
0.42
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R205-450.C


Part Number 11N80-C
Description N-CHANNEL MOSFET
Maker UTC
PDF Download

11N80-C Datasheet PDF






Similar Datasheet

1 11N80-C N-CHANNEL MOSFET
UTC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy