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11N80-C Datasheet Preview

11N80-C Datasheet

N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD

11N80-C

11A, 800V NHANNEL

POWER MOSFET

 DESCRIPTION

The UTC 11N80-C provide excellent RDS(ON), low gate

charge and operation with low gate voltages. This device is

suitable for use as a load switch or in PWM applications.

 FEATURES0

* RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=5.5A

* Low Reverse Transfer Capacitance

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

 SYMBOL

2.Drain

Power MOSFET

TO-3P

TO-220F1

TO-220F2

1.Gate

3.Source

 ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

11N80L-TF1-T

11N80G-TF1-T

11N80L-TF2-T

11N80G-TF2-T

11N80L-T3P-T

11N80G-T3P-T

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-220F1

TO-220F2

TO-3P

Pin Assignment

123

GDS

Packing

Tube

11N80G-TF1-T

(1)Packing Type

(2)Package Type

(3)Green Package

(1) T: Tube

(2) TF1: TO-220F1, TF2: TO-220F2, T3P: TO-3P

(3) G: Halogen Free and Lead Free, L: Lead Free

 MARKING

Lot Code

UTC

11N80

L: Lead Free

G: Halogen Free

Date Code

www.unisonic.com.tw

1 of 8

QW-R205-450.C

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11N80-C Datasheet Preview

11N80-C Datasheet

N-CHANNEL MOSFET

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11N80-C

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

Gate-Source Voltage

VGSS

±30

Drain Current

Continuous

11 A

Pulsed (Note 2)

IDM

Avalanche Energy

Single Pulsed (Note 3)

EAS

451 mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

1.2 V/ns

Power Dissipation

TO-220F1/ TO-220F2

TO-3P

40 W

297 W

Junction Temperature

Storage Temperature

TSTG

+150

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.

3. L=10mH, IAS=9.5A, VDD=90V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤11A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

 THERMAL DATA

Junction to Ambient

Junction to Case

PARAMETER

TO-220F1/ TO-220F2

TO-3P

TO-220F1/TO-220F2

TO-3P

SYMBOL

θJA

θJC

RATINGS

62.5

3.125

0.42

UNIT

°С/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 8

QW-R205-450.C

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11N80-C Datasheet

N-CHANNEL MOSFET

11N80-C Datasheet

N-CHANNEL MOSFET

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