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11N80-C - N-CHANNEL MOSFET

General Description

The UTC 11N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S0.
  • RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=5.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL 2.Drain 1 1 1 Power MOSFET TO-3P TO-220F1 TO-220F2 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 11N80-C 11A, 800V NHANNEL POWER MOSFET  DESCRIPTION The UTC 11N80-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 0.9 Ω @ VGS=10V, ID=5.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 2.Drain 1 1 1 Power MOSFET TO-3P TO-220F1 TO-220F2 1.Gate 3.