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11N80C3 - Power Transistor

General Description

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Infineon Technologies is an approved CECC manufacturer.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID 800 0.45 11 V Ω A PG-TO220-3-31 PG-TO220 • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N80C3 SPA11N80C3 Package PG-TO220 Ordering Code Q67040-S4438 Marking 11N80C3 11N80C3 PG-TO220-3-31 SP000216320 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP ID 11 7.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Page 1 Value SPA Unit A 111) 7.11) 33 470 0.2 11 ±20 ±30 41 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.