• Part: 11N80C3
  • Description: Power Transistor
  • Manufacturer: Infineon
  • Size: 485.80 KB
Download 11N80C3 Datasheet PDF
11N80C3 page 2
Page 2
11N80C3 page 3
Page 3

11N80C3 Datasheet Text

SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor Feature - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - Ultra low effective capacitances - Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID 800 0.45 11 V Ω A PG-TO220-3-31 PG-TO220 - PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP11N80C3 SPA11N80C3 Package PG-TO220 Ordering Code Q67040-S4438 Marking 11N80C3 11N80C3 PG-TO220-3-31 SP000216320 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol SPP ID 11 7.1 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg Page 1 Value SPA Unit A 111) 7.11) 33 470 0.2 11 ±20 ±30 41 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.2A, VDD=50V 33 470 0.2 11 ±20 ±30 156 Avalanche energy, repetitive tAR limited by Tjmax2)...