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2SB1198 - LOW FREQUENCY PNP TRANSISTOR

Description

The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor.

Features

  • High breakdown voltage : BVCEO= -80V.
  • Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA) 3 SOT-23 1:.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA) 3 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL www.DataSheet4U.com LIMITS -80 -80 -5 -0.5 0.
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