2SB1198 - Low-frequency Transistor

ROHM

Key Features

1) Low VCE(sat). VCE(sat) =.
0.2V (Typ. ) (IC / IB =.
0.5A /.
50mA) 2) High breakdown voltage. BVCEO =.
80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Unit:s mm) FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) (96-136-B93) 229 Transistors FPackaging specifications and hFE hFE values are classified as follows : 2SB1198K FElectrical characteristic curves 230 Transistors 2SB1198K.

2SB1198 low-frequency transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SB1198
Manufacturer	ROHM
File Size	93.46 KB
Description	Low-frequency Transistor
Datasheet	2SB1198 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K.