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2SB1198 Datasheet PDF

Unisonic Technologies 2SB1198

2SB1198 is an epitaxial planar type PNP silicon transistor.
Part No. 2SB1198
Datasheet 2SB1198 Download
Manufacturer
Unisonic Technologies
Description LOW FREQUENCY PNP TRANSISTOR
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2SB1198 datasheet page 1 preview

DESCRIPTION

The UTC 2 1

FEATURES

*High breakdown voltage : BVCEO= -80V *Low VCE(sat) : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA) 3 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR

ABSOLUTE MAXIMUM RATINGS

( Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL LIMITS -80 -80 -5 -0.5 0.2 150 -55 ~ +150 UNIT V V V A W °C °C VCBO VCEO VEBO Ic Pc Tj TSTG

ELECTRICAL CHARACTERISTICS

(Ta=25°C,unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob TEST CONDITIONS Ic= -50μA Ic= -2mA IE= -50μA VCB= -50V VEB= -4V Ic/IB= -0.5A/-50mA VCE= -3V,Ic= -0.1A VCE=-10V,IE= 50 mA, f=100MHz VCB= -10V, IE= 0...
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