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2SB649A Datasheet Preview

2SB649A Datasheet

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

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2SB649A pdf
UNISONIC TECHNOLOGIES CO., LTD
2SB649/A
PNP SILICON TRANSISTOR
BIPOLAR POWER GENERAL
PURPOSE TRANSISTOR
1
SOT-89
APPLICATIONS
* Low frequency power amplifier complementary pair with UTC
2SB669/A
1
TO-126
1
TO-126C
1
TO-92
www.DataSheet4U.com
*Pb-free plating product number:
2SB649L/2SB649AL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SB649-x-AB3-R
2SB649L-x-AB3-R
2SB649-x-T6C-K
2SB649L-x-T6C-K
2SB649-x-T60-K
2SB649L-x-T60-K
2SB649-x-T92-B
2SB649L-x-T92-B
2SB649-x-T92-K
2SB649L-x-T92-K
2SB649A-x-AB3-R
2SB649AL-x-AB3-R
2SB649A-x-T6C-K
2SB649AL-x-T6C-K
2SB649A-x-T60-K
2SB649AL-x-T60-K
2SB649A-x-T92-B
2SB649AL-x-T92-B
2SB649A-x-T92-K
2SB649AL-x-T92-K
Package
SOT-89
TO-126C
TO-126
TO-92
TO-92
SOT-89
TO-126C
TO-126
TO-92
TO-92
Pin Assignment
1 23
B CE
E CB
E CB
E CB
E CB
B CE
E CB
E CB
E CB
E CB
Packing
Tape Reel
Bulk
Bulk
Tape Box
Bulk
Tape Reel
Bulk
Bulk
Tape Box
Bulk
2SB649L-x-AB3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AB3: SOT-89, T6C: TO-126C, T60: TO-126,
T 92: TO-92
(3) x: refer to Classification of hFE
(4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R204-006,D



UTC
UTC

2SB649A Datasheet Preview

2SB649A Datasheet

BIPOLAR POWER GENERAL PURPOSE TRANSISTOR

No Preview Available !

2SB649A pdf
2SB649/A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25 , unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-180
V
Collector-Emitter Voltage
2SB649
2SB649A
VCEO
-120
-160
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC -1.5
A
Collector Peak Current
lC(PEAK)
-3
A
TO-126/TO-126C
1.4 W
Collector Power Dissipation
TO-92
PD
1
W
SOT-89
500 mW
Junction Temperature
TJ +150 °C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Base Breakdown Voltage
BVCBO IC=-1mA, IE=0
Collector to Emitter Breakdown 2SB649
Voltage
2SB649A
BVCEO
IC=-10mA, RBE=
Emitter to Base Breakdown Voltage
BVEBO IE=-1mA, IC=0
Collector Cut-off Current
ICBO VCB=-160V, IE=0
DC Current Gain
2SB649
hFE1 VCE=-5V, IC=-150mA (note)
hFE2 VCE=-5V, IC=-500mA (note)
2SB649A hFE1 VCE=-5V, IC=-150mA (note)
hFE2 VCE=-5V, IC=-500mA (note)
Collector-Emitter Saturation Voltage
VCE(SAT) Ic=-600mA, IB=-50mA
Base-Emitter Voltage
VBE VCE=-5V, IC=-150mA
Current Gain Bandwidth Product
fT VCE=-5V,IC=-150mA
Output Capacitance
Cob VCB=-10V, IE=0, f=1MHz
Note: Pulse test.
MIN TYP MAX UNIT
-180
V
-120
-160
V
-5 V
-10 µA
60 320
30
60 200
30
-1 V
-1.5 V
140 MHz
27 pF
CLASSIFICATION OF hFE
RANK
RANGE
B
60-120
C
100-200
D
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-006,D


Part Number 2SB649A
Description BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
Maker UTC
Total Page 4 Pages
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