LGE 2SB649A
PNP Transistor
| Part No. | 2SB649A |
|---|---|
| Datasheet | 2SB649A Download |
| Manufacturer |  LGE |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
3 2 1 3. BASE Low frequency power amplifier complementary pair with 2SD669/AMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage 2SB649 -120 V 2SB649A -160 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless 3.000 3.200 10.60 0 11.00 0 15.30 0 15.70 0 3.900 4.100 2.100 2.300 1.170 1.370 0.000 0.300 0.660 0.860 2.290 TYP 4.480 4.680 0.450 0.600 Dimensions in inches and (millimeters) otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-of
