Weitron Technology 2SB649A
PNP Transistor
| Part No. | 2SB649A |
|---|---|
| Datasheet | 2SB649A Download |
| Manufacturer |  Weitron Technology |
| Description | PNP Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO V EBO IC PD Tj Tstg -120 6.0 -1.5 1.0 +150 -55 to +150 2SB649 -180 -160 2SB649A Unit V V V A W ˚C ˚C WEITRON 1/5 21-Mar-06 2SB649/2SB649AELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) (Countinued) Characteristics Collector-Emitter Breakdown Voltage IC = -1.0mA, IE = 0 Collector-Base Breakdown Voltage 2SB649 IC = -10mA, IB = 0 2SB649A Emitter-Base Breakdown Voltage IC = 0, IE = -1.0mA Collector Cutoff Current VCB = -160V, IE = 0 Emitter Cutoff Current VEB = -4.0V, IC = 0 Symbol V(BR)CBO Min -180 -120 -160 -5.0 Typ Max Unit V V(BR)CEO V(BR)EBO ICBO IEBO - -10 -10 V V µA µA ON CHARACTERISTICS DC Current Gain VCE = -5.0V, IC = -150mA VCE = -5.0V, IC = -500mA Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA Base-Emitter Voltage VCE = -5.0V, I C = -150mA Transition fr...
