5N120-E3 - N-CHANNEL POWER MOSFET

Description

charge and operation with low gate voltages.

suitable for use as a load switch or in PWM applications.

Features

S0.
RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.5A.
Low Reverse Transfer Capacitance 1.
Fast Switching Capability.
Avalanche Energy Specified.
Improved dv/dt Capability, High Ruggedness.
SYMBOL Power MOSFET TO-247 TO-220 TO-263.

Unisonic Technologies Co., Ltd

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5N120-E3 N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – 5N120-E3

Datasheet Details

Part number	5N120-E3
Manufacturer	Unisonic Technologies Co., Ltd
File Size	250.91 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	5N120-E3 Datasheet
Additional preview pages of the 5N120-E3 datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 5N120-E3 Preliminary 5.0A, 1200V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 5N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1  FEATURES0 * RDS(ON) ≤ 3.5 Ω @ VGS=10V, ID=2.

Published: Dec 4, 2023 |