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5N120 Datasheet Preview

5N120 Datasheet

N-CHANNEL MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
5N120
5A, 1200V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 5N120 provide excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES0
* RDS(ON) 3.1@ VGS=10V, ID=2.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
5N120L-T47-T
5N120G-T47-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-247
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-532.A




UTC

5N120 Datasheet Preview

5N120 Datasheet

N-CHANNEL MOSFET

No Preview Available !

5N120
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
1200
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous
ID
5A
Pulsed (Note 2)
IDM
10
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
1400
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2 V/ns
Power Dissipation
PD 160 W
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L=155mH, IAS=4.25A, VDD=90V, RG=25 , Starting TJ = 25°C
4. ISD5.0A, di/dt200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
50
0.78
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=1200V, VGS=0V
VGS=±30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=2.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge (Note 1)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time (Note 1)
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=100V, VGS=10V, ID=5A
IG=1mA (Note 1, 2)
VDD=100V, VGS=10V, ID=5A,
RG =25(Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage (Note 1)
VSD
Body Diode Reverse Recovery Time (Note 1)
trr
Body Diode Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle2%.
2. Essentially independent of operating temperature.
IS=5.0A, VGS=0V
IS=5.0A, VGS=0V,
dIF/dt=100A/µs
MIN TYP MAX UNIT
1200
V
10 μA
±100 nA
3.0 6.0 V
3.1
1550
280
60
pF
pF
pF
73 nC
12 nC
40 nC
45 ns
90 ns
200 ns
60 ns
5A
10 A
1.4 V
1.1 μS
15 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R205-532.A


Part Number 5N120
Description N-CHANNEL MOSFET
Maker UTC
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