Datasheet4U Logo Datasheet4U.com

7N120-E2 - N-CHANNEL POWER MOSFET

General Description

The UTC 7N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S0.
  • RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=3.5A.
  • Low Reverse Transfer Capacitance.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
7N10 N-Channel Power MOSFET Unisonic Technologies
7N10Z N-CHANNEL POWER MOSFET Unisonic Technologies
7N180M Varistor JOYIN

Other Datasheets by Unisonic Technologies

Part Number Description
7N100-C N-CHANNEL MOSFET
7N150-E3 1500V N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 7N120-E2 Preliminary 7.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N120-E2 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=3.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N120L-TF1-T 7N120G-TF1-T 7N120L-T47-T 7N120G-T47-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-247 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube  MARKING www.unisonic.com.