* RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL Power MOSFET
*.

* FEATURES * RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy tested * Improved d.

The UTC 8NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used .

8NM50

8NM60

8NM60-U2

8NM65

8NM65-SH

8NM90

8N05

8N100-C

8N100-FC

8N10LF3

8N10P

8N18

8N20