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8NM80-Q - 800V N-CHANNEL POWER MOSFET

General Description

The UTC 8NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

This power MOSFET is usually used at AC-DC converters for power applications.

Key Features

  • S.
  • RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD 8NM80-Q 8.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET  DESCRIPTION The UTC 8NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications.  FEATURES * RDS(ON) ≤ 0.75 Ω @ VGS=10V, ID=4.